https://lifescienceglobal.com/pms/index.php/jcst/issue/feedJournal of Coating Science and Technology2024-09-04T09:59:43+00:00Support Managersupport@lifescienceglobal.comOpen Journal Systems<p><span style="color: #333333;"><span style="font-family: arial,helvetica,sans-serif; font-size: 10pt;"><span>The Journal of Coating Science and Technology (JCST), is an international scientific peer-reviewed journal specializing in the fundamental and applied science of coating materials and surface engineering. The journal aims to provide a forum for the disseminations and exchanges of scientific and technological knowledge based on original research works among those linked to advanced coatings study, development and/or production, focusing in different areas such as wear-resistant coatings, corrosion protective coatings, optical protective coatings, films for biomedical and energy purposes, decorative coatings, and others, produced by advanced techniques such as PVD, CVD, thermal projection, etc.</span></span></span></p>https://lifescienceglobal.com/pms/index.php/jcst/article/view/9760Conditions of Formation of α- and β-Modifications of Ge3N4 and Preparation of Germanium Oxynitride Dielectric Films2024-09-04T09:59:43+00:00Zurab V. Wardosanidzezvward@yahoo.comIrakli Nakhutsrishviliiraklinakhutsrishvili52@gmail.comRevaz Kokhreidzeinfo@lifescienceglobal.com<p>The binary compound of germanium with nitrogen (Ge<sub>3</sub>N<sub>4</sub>) is used in various fields of science and technology. Among the experimentally discovered and theoretically predicted crystal modifications of Ge<sub>3</sub>N<sub>4</sub> at ordinary pressures and temperatures, only the α- and β-phases of the nitride are stable. There are conflicting data in the literature on the conditions for the formation of these phases. The main methods for obtaining Ge<sub>3</sub>N<sub>4</sub> are the nitridation of elemental germanium and its dioxide with ammonia. The present work studied the influence of the degree of humidity of ammonia on the possibility of the formation of pure α- and β-phases and their mixtures. It is shown that it is possible to obtain nitride with practically any ratio of these phases by varying degrees of humidity and the temperature of the process. During the process, the formation of germanium nitride is accompanied by its simultaneous evaporation. Oxidation with water vapors also produces volatile monoxide. Simultaneous evaporation of germanium nitride and oxide results in the deposition of a film of germanium oxynitride in the cold zone of the reactor. This film is a germanium oxynitride used in microelectronics as a dielectric layer in Metal-Insulator-Semiconductor systems.</p>2024-09-04T00:00:00+00:00Copyright (c) 2024